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1. (US20110318857) Nitride semiconductor light emitting device and fabrication method thereof
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Claims

1. A method of fabricating a nitride semiconductor light emitting device, the method comprising:
forming a first buffer layer above a substrate;
forming a second buffer layer containing indium above the first buffer layer;
forming a third buffer layer containing indium above the second buffer layer;
forming an indium-doped GaN layer above the third buffer layer;
forming a first nitride semiconductor layer above the indium-doped GaN layer;
forming an active layer above the first nitride semiconductor layer; and
forming a second nitride semiconductor layer above the active layer.
2. The method according to claim 1, further comprising forming a third nitride semiconductor layer above the second nitride semiconductor layer.
3. The method according to claim 1, wherein the second buffer layer is grown in a single crystal at a higher temperature than that of the first buffer layer.
4. The method according to claim 1, wherein the first buffer layer has a growth temperature ranging from 500° C. to 600° C. and the second buffer layer has a growth temperature ranging from 750° C. to 850° C.
5. The method according to claim 1, wherein the indium content contained in the second buffer layer is less than 10%.
6. The method according to claim 1, wherein the third buffer layer is grown in a single crystal such that the indium content contained therein is gradually decreased.
7. The method according to claim 1, wherein the third buffer layer has a growth temperature which is higher than that of the second buffer layer and is linearly increased to a growth temperature of the indium-doped GaN.
8. The method according to claim 1, further comprising recrystallizing the first buffer layer at a temperature higher than a growth temperature of the first buffer layer, after the first buffer layer is formed.
9. The method according to claim 1, wherein the first nitride semiconductor layer is formed by a delta doping in which a concentration of a doped material is periodically varied, and is an n-GaN layer which is delta-doped with silicon/indium or silicon/aluminum.
10. The method according to claim 1, further comprising forming a low-mole indium-doped GaN layer or a low-mole InGaN layer having an indium content of 1-5% between the first nitride semiconductor layer and the active layer.
11. The method according to claim 1, wherein the second nitride semiconductor layer is formed by a delta doping in which a concentration of a doped material is periodically varied, and is a p-GaN layer which is delta-doped with magnesium or aluminum or magnesium/aluminum.
12. The method according to claim 1, wherein the third nitride semiconductor layer is formed in an n-InGaN layer with a super grading structure in which an indium content is gradually varied.