البحث في مجموعات البراءات الوطنية والدولية

1. (WO2016033836) MANUFACTURING METHOD AND STRUCTURE OF OXIDE SEMICONDUCTOR TFT SUBSTRATE

Pub. No.:    WO/2016/033836    International Application No.:    PCT/CN2014/086880
Publication Date: Fri Mar 11 00:59:59 CET 2016 International Filing Date: Sat Sep 20 01:59:59 CEST 2014
IPC: H01L 29/786
H01L 27/12
H01L 21/77
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO.,LTD.
深圳市华星光电技术有限公司
Inventors: LI, Wenhui
李文辉
Title: MANUFACTURING METHOD AND STRUCTURE OF OXIDE SEMICONDUCTOR TFT SUBSTRATE
Abstract:
A manufacturing method and structure of an oxide semiconductor TFT substrate. An oxide conductor layer (5) is used to define a channel (51) of the oxide semiconductor TFT substrate, and since the oxide conductor layer (5) is relatively thin, in comparison with the prior art, the width of the channel (51) may be made smaller, and the width of the channel (51) may be accurately controlled. Therefore, the difficulty of the manufacturing process of the oxide semiconductor TFT substrate is reduced, the performance of the oxide semiconductor TFT substrate is improved, and the production yield is increased. In the structure of the manufactured oxide semiconductor TFT substrate, since the oxide conductor layer (5) is similar to an oxide semiconductor layer (6) in terms of structural composition, a good ohmic contact may be formed. The oxide conductor layer (5) does not cause metal ion pollution with regard to the oxide semiconductor layer (6), and since the oxide conductor layer (5) is transparent, the aperture ratio may be increased.