البحث في مجموعات البراءات الوطنية والدولية

1. (WO2003061119) SURFACE ACOUSTIC WAVE ELEMENT AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2003/061119    International Application No.:    PCT/JP2003/000362
Publication Date: Fri Jul 25 01:59:59 CEST 2003 International Filing Date: Sat Jan 18 00:59:59 CET 2003
IPC: H03H 3/08
Applicants: NEC CORPORATION

HATTORI, Wataru

Inventors: HATTORI, Wataru

Title: SURFACE ACOUSTIC WAVE ELEMENT AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Abstract:
A template (3) manufactured to have high-accuracy protrusions and recesses in advance by a lithography technology employing an electron beam is pressed against a resist film (2) applied onto a substrate (1) thus transferring a resist pattern (5). A thin metal film (6) for electrode is then formed on the resist pattern (5) formed by transfer and then it is stripped off by a lift-off method along with the resist film (2).