||WO||WO/2014/062167 - MAXIMUM POWER POINT TRACKING CONTROLLERS AND ASSOCIATED SYSTEMS AND METHODS||24.04.2014||
||PCT/US2012/060468||VOLTERRA SEMICONDUCTOR CORPORATION||MCJIMSEY, Michael, D.|
A maximum power point tracking controller
includes an input port for electrically coupling to an electric power source, an output port for electrically coupling to a load, a control
switching device, and a control
subsystem. The control
switching device is adapted to repeatedly switch between its conductive and non- conductive states to transfer power from the input port to the output port. The control
subsystem is adapted to control
switching of the control
switching device to regulate a voltage across the input port, based at least in part on a signal representing current flowing out of the output port, to maximize a signal representing power out of the output port.
||WO||WO/2014/059577 - CONDUCTIVE COMPOSITION||24.04.2014||
||PCT/CN2012/082959||DOW GLOBAL TECHNOLOGIES LLC||ZHANG, Yong W|
Disclosed is a conductive composition useful for the preparation of electrically conductive structures on a substrate comprising a plurality of metal particles, a plurality of glass particles and a vehicle comprising at least one cellulose derivative and at least one solid organopolysiloxane resin dissolved in a mutual organic solvent. The solid organopolysiloxane resin acts as adhesion promoter and assists in stably dispersing the metal and glass particles to avoid an agglomeration of such particles without degrading the rheological properties. From such conductive compositions uniform well adherent electrically conductive structures essentially free from defects in the form of cracks, bubbles or coarse particulates can be prepared on dielectric or semiconductor substrates such as silicon wafers in an efficient and cost-saving manner e.g. by screen printing, drying and sintering while inducing only low warping of the substrate. These characteristics render said conductive compositions particularly useful for the fabrication of electrodes of a semiconductor solar cell
helping to increase the cell conversion
||WO||WO/2014/062169 - MAXIMUM POWER POINT CONTROLLER TRANSISTOR DRIVING CIRCUITRY AND ASSOCIATED METHODS||24.04.2014||
||PCT/US2012/060470||VOLTERRA SEMICONDUCTOR CORPORATION||NG, Vincent, W.|
An electric power system
includes a string of N maximum power point tracking (MPPT) controllers
having output ports electrically coupled in series, where N is an integer greater than one. At least one of the N MPPT controllers
includes respective transistor driver circuitry powered from a power supply rail of an adjacent one of the N MPPT controllers
of the string. Another MPPT controller
includes an n- channel field effect freewheeling transistor electrically coupled across an output port and a resistive device electrically coupled between an input port and a gate of the freewheeling transistor, such that the freewheeling transistor operates in its conductive state when power is applied to the input port and a control
subsystem of the controller
is in an inactive state.
||WO||WO/2014/062170 - SCALABLE MAXIMUM POWER POINT TRACKING CONTROLLERS AND ASSOCIATED METHODS||24.04.2014||
||PCT/US2012/060472||VOLTERRA SEMICONDUCTOR CORPORATION||MCJIMSEY, Michael, D.|
A scalable maximum power point tracking (MPPT) controller
includes an input and an output port, a switching circuit adapted to transfer power from the input port to the output port, and a controller
core. The controller
core is adapted to (a) control
the switching circuit to maximize an amount of power extracted from a photovoltaic
device electrically coupled to the input port, and (b) set one or more parameters of the MPPT controller
based at least in part on a configuration code representing a number of photovoltaic
cells of the photovoltaic
device electrically coupled in series.
||WO||WO/2014/062168 - SYSTEMS AND METHODS FOR CONTROLLING MAXIMUM POWER POINT TRACKING CONTROLLERS||24.04.2014||
||PCT/US2012/060469||VOLTERRA SEMICONDUCTOR CORPORATION||STRATAKOS, Anthony, J.|
A method for operating a maximum power point tracking (MPPT) controller
including a switching circuit adapted to transfer power between an input port and an output port includes the steps of: (a) in a first operating mode of the MPPT controller
, causing a first switching device of the switching circuit to operate at a fixed duty cycle; and (b) in a second operating mode of the MPPT controller
, causing a control
switching device of the switching circuit to repeatedly switch between its conductive and non-conductive states to maximize an amount of power extracted from a photovoltaic
device electrically coupled to the input port.
||WO||WO/2014/061719 - PHOTOELECTRIC CONVERSION DEVICE, BUILT STRUCTURE, AND ELECTRONIC INSTRUMENT||24.04.2014||
||PCT/JP2013/078139||NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY||ISHIBASHI Akira|
Provided is a photoelectric conversion
device which allows regions that are insensitive to incident light to be eliminated, allows degradation of the organic semiconductor due to the Staebler-Wronski effect or UV components to be suppressed, makes it possible to obtain an extremely high photoelectric conversion
efficiency, allows the area to be increased with exceptional ease, and can be suitably used as a solar cell
or the like. The photoelectric conversion
device has: a structural body (80) for converting
3D-space-propagating light into 2D-space-propagating light; a planar optical waveguide (20) for guiding the 2D-space-propagating light; and semiconductor layers (30) for photoelectric conversion
, provided to the edge parts of the planar optical waveguide (20). Light incident on a principal surface of the planar optical waveguide (20) is guided through the interior thereof and caused to be incident on a semiconductor layer (30). The angle (θ) between the net direction of progression of light guided through the planar optical waveguide (20) and the net direction of movement of carriers generated in a semiconductor layer (30) by the light incident on the semiconductor layer (30) from the edge surface of the planar optical waveguide (20) is substantially a right angle.
||WO||WO/2014/061535 - SEMICONDUCTOR DEVICE||24.04.2014||
||PCT/JP2013/077541||SEMICONDUCTOR ENERGY LABORATORY CO., LTD.||YAMAZAKI, Shunpei|
Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.
||WO||WO/2014/063029 - PROCESS AND APPARATUS FOR SOLAR CELL PRODUCTION FROM AGRICULTURAL RESIDUES||24.04.2014||
||PCT/US2013/065645||INDIANA UNIVERSITY RESEARCH AND TECHNOLOGY CORPORATION||SCHUBERT, Peter J.|
Silicon employable in a photovoltaic
cell is produced from agricultural residue. The process includes the steps of (a) thermochemically converting
the lignocellulosic portion of agricultural residue to form (i) a producer gas stream comprising carbon monoxide and hydrogen, and ii) a quantity of ash comprising silicate material, carbon char and at least one of phosphorus, potassium and a metal; (b) directing the producer gas stream to a generator to generate electric power and heat; (c) leaching the ash with acidic fluid to separate the phosphorus, potassium or metal to produce a mixture of the silicate material and carbon char; (d) heating the silicate and carbon mixture to produce silicon metal and carbon dioxide by carbothermal reduction. Rice hulls are the most preferable agricultural residue. A corresponding apparatus produces photovoltaic
-grade silicon. The apparatus includes an indirectly-heated pyrolytic gasifier, a generator, an acid wash and a carbothermal reactor.
||WO||WO/2014/062850 - SYSTEMS AND METHODS FOR MONOLITHICALLY INTEGRATED BYPASS SWITCHES IN PHOTOVOLTAIC SOLAR CELLS AND MODULES||24.04.2014||
||PCT/US2013/065316||SOLEXEL, INC.||MOSLEHI, Mehrdad, M.|
Structures and methods for a solar cell
having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell
and bypass switch comprising a semiconductor layer having background doping, a frontside, and a backside is provided. A patterned first level metal is positioned on the layer backside and an electrically insulating backplane is positioned on the first level metal. A trench isolation pattern partitions the semiconductor layer into a solar cell
region and at least one monolithically integrated bypass switch region. A patterned second level metal is positioned on the electrically insulating backplane and which connects to the first level metal through the backplane to complete the electrical metallization of the monolithically integrated solar cell
and bypass switch structure.
||WO||WO/2014/063149 - MULTILAYER COATINGS FORMED ON ALIGNED ARRAYS OF CARBON NANOTUBES||24.04.2014||
||PCT/US2013/065918||GEORGIA TECH RESEARCH CORPORATION||COLA, Baratunde|
Arrays containing carbon nanostructure-oxide-metal diodes, such as carbon nanotube (CNT)-oxide- metal diodes and methods of making and using thereof are described herein. In some embodiments, the arrays contain vertically aligned carbon nanostructures, such as multiwall carbon nanotubes (MWCNTs) coated with a conformal coating of a dielectric layer, such as a metal oxide. The tips of the carbon nanostructures are coated with a low work function metal, such as a calcium or aluminum to form a nanostructure- oxide-metal interface at the tips. The arrays can be used as rectenna at frequencies up to about 40 petahertz because of their intrinsically low capacitance. The arrays described herein produce high asymmetry and non-linearity at low turn on voltages down to 0.3 V and large current densities up to about 7,800 mA/cm2 and a rectification ratio of at least about 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, or 60.