||WO||WO/2014/124675 - BUSBARLESS REAR‑CONTACT SOLAR CELL, METHOD OF MANUFACTURE THEREFOR AND SOLAR MODULE HAVING SUCH SOLAR CELLS||21.08.2014||
||PCT/EP2013/052999||UNIVERSITÄT KONSTANZ||HAHN, Giso|
A busbarless rear‑contact solar cell
and possible electrical interconnection thereof are presented. The substrate reverse (5) of a semiconductor substrate (3) has a plurality of linear emitter regions (15) and base regions (17) with which electrical contact is made by likewise linear emitter metal contacts (7) and base metal contacts (9), with the emitter metal contacts (7) being connected to one another, and the base metal contacts (9) being connected to one another, in electrically conductive fashion not by busbars that run parallel thereto and are in electrical contact with the substrate reverse (5). Each of the emitter metal contacts (7) and each of the base metal contacts (9) have, along an emitter region (15) or base region (17) that is in contact therewith, a plurality of interruptions (29, 31) that are substantially shorter than adjoining uninterrupted regions of emitter and base metal contacts (7, 9). First and second metal wires (19, 21) that are used for the interconnection of the solar cell
can run through these interruptions (29, 31) so as to cross the emitter and base regions (15, 17), without producing shorts.
||WO||WO/2014/124567 - SOLAR ENERGY MODULE||21.08.2014||
||PCT/CN2013/072786||AU OPTRONICS CORPORATION||HU, Yencheng|
A solar energy module comprises at least two solar cells
(100) and a conductive band (140). Each solar cell
(100) comprises a photoelectric conversion element (110), a light-incident surface electrode (120), and a backlight surface electrode (130). The photoelectric conversion element (110) is provided with a light-incident surface (112) and a backlight surface (114) which are opposite to each other. The light-incident surface electrode (120) is disposed on the light-incident surface (112) of the photoelectric conversion element (110), and the light-incident surface electrode (120) comprises at least one bus electrode (121) and a plurality of finger electrodes (123). The bus electrode (121) comprises at least two line electrodes (122), and the line electrodes (122) are located on the light-incident surface (112). The finger electrodes (123) are located on the light-incident surface (112), and the finger electrodes (123) and the bus electrode (121) extend in different directions. The backlight surface electrode (130) is disposed on the backlight surface (114) of the photoelectric conversion element (110). The conductive band (140) is used for electrically connecting the at least two solar cells
||WO||WO/2014/126293 - COMPOSITION FOR FORMING ELECTRODE OF SOLAR CELL AND ELECTRODE FORMED THEREOF||21.08.2014||
||PCT/KR2013/002267||CHEIL INDUSTRIES INC.||PARK, Young Ki|
The present invention relates to a composition for forming an electrode of a solar cell
, the composition comprising: a conductive powder; a glass frit; and an organic vehicle, wherein the glass frit is a bismuth oxide - tellurium oxide - zinc oxide - lithium oxide based glass frit containing: 5-20 wt% of bismuth oxide; 55-80 wt% of tellurium oxide; 0.1-15 wt% of zinc oxide; and 0.1-10 wt% of lithium oxide. An electrode of a solar cell
which is formed of the composition for forming an electrode of a solar cell
has a low serial resistance (Rs) and a high open circuit voltage (Voc), and thus has excellent conversion efficiency and an excellent adhesive strength with a ribbon.
||WO||WO/2014/125902 - CIGS-FILM MANUFACTURING METHOD AND CIGS-SOLAR-CELL MANUFACTURING METHOD USING SAME||21.08.2014||
||PCT/JP2014/051509||NITTO DENKO CORPORATION||NISHII Hiroto|
Provided are: a CIGS-film manufacturing method whereby a CIGS film that exhibits excellent conversion efficiency can be manufactured at low cost with low variability even when fabricating a large-area element; and a CIGS-solar
manufacturing method using said CIGS-film manufacturing method. Said CIGS-film manufacturing method has the following steps: a lamination step in which a layer (A) containing indium, gallium, and selenium and a layer (B) containing copper and selenium are laminated to a substrate in that order, in a solid-phase state; and a heating step in which the laminate containing layers A and B is heated so as to melt layer B, producing a liquid-phase state, diffusing the copper from layer B throughout layer A, and causing crystal growth. Layer A is formed by repeating a lamination process in which a gallium selenide film (Y) a an indium selenide film (X) are laminated in that order, and the ratio (Y/X) between the thickness of the gallium selenide film (Y) and the thickness of the indium selenide film (X) is reduced each time the lamination process is repeated.
||WO||WO/2014/126072 - PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL COMPRISING SAME||21.08.2014||
||PCT/JP2014/053102||KONICA MINOLTA, INC.||KAWASAKI, Hidekazu|
The purpose of the present invention is to provide a photoelectric conversion element which has excellent photoelectric conversion efficiency. A photoelectric conversion element of the present invention comprises a base, a first electrode, a photoelectric conversion layer containing a semiconductor and a sensitizing dye, a charge transport layer, and a second electrode. This photoelectric conversion element is characterized in that the sensitizing dye is represented by general formula (1).
||WO||WO/2014/126117 - COMPOSITION FOR FORMING BARRIER LAYER, SEMICONDUCTOR SUBSTRATE WITH BARRIER LAYER, METHOD FOR PRODUCING SUBSTRATE FOR SOLAR CELLS, AND METHOD FOR MANUFACTURING SOLAR CELL ELEMENT||21.08.2014||
||PCT/JP2014/053227||HITACHI CHEMICAL COMPANY, LTD.||ORITA, Akihiro|
A composition for forming a barrier layer, which contains an organic binder, a dispersion medium, and at least one silicon-containing compound that is selected from the group consisting of at least one alkoxysilane represented by (R1)4-nSi(OR2)n (general formula (1)), polysilazanes and siloxane resins obtained by hydrolyzing and condensation polymerizing the above-described alkoxysilane, and which has a viscosity of from 1 Pa·s to 100 Pa·s at 25°C. In the formula, each of R1 and R2 independently represents an aliphatic hydrocarbon group having 1-6 carbon atoms or an aromatic hydrocarbon group; and n represents an integer of 1-4. In cases where two or more R1 or R2 moieties are contained, the R1 moieties or the R2 moieties may be the same as or different from each other, respectively.
||WO||WO/2014/126121 - RESIN COMPOSITION FOR SOLAR CELL SEALING MATERIALS, SOLAR CELL SEALING MATERIAL USING SAME, AND SOLAR CELL MODULE||21.08.2014||
||PCT/JP2014/053247||JAPAN POLYETHYLENE CORPORATION||MAEYAMA Tomoaki|
Provided are: a resin composition for solar cell
sealing materials, which contains an ethylene/α-olefin and has good crosslinkability, heat resistance, transparency and impact resistance; a solar cell
sealing material which uses the resin composition; and a solar cell
module. A resin composition for solar cell
sealing materials, which is characterized by containing (A) an ethylene/α-olefin copolymer that has the characteristics (a1)-(a3) described below, and (B) an organic peroxide. (a1) The number of branches (N) of comonomers in the ethylene/α-olefin copolymer and the total number (V) of vinyl and vinylidene satisfy formula (1): N × V ≥ 10. (In this connection, N and V are numbers per 1,000 carbon atoms in total in the main chain and side chains as determined by NMR.) (a2) The MFR (at 190°C, under a load of 21.18 N) is 0.1-100 g/10 minutes. (a3) The density is 0.860-0.920 g/cm3.
||WO||WO/2014/126065 - GLASS PANEL||21.08.2014||
||PCT/JP2014/053092||ASAHI GLASS COMPANY, LIMITED||SATO, Katsuhito|
Provided is a glass panel having a glass plate that is provided with a solar cell
element, wherein increase of the temperature of a light modulation sheet is able to be suppressed by protecting the light modulation sheet from the heat of sunlight.
A glass panel which is characterized in that: a solar cell
element and a light modulation element are arranged between a first glass plate on the sunlight incident side and a second glass plate on the sunlight exit side, sequentially from the first glass plate side; and a heat reflective element is interposed between the solar cell
element and the light modulation element.
||WO||WO/2014/125898 - CIGS FILM AND CIGS SOLAR CELL USING SAME||21.08.2014||
||PCT/JP2014/051505||NITTO DENKO CORPORATION||TERAJI Seiki|
A CIGS film that can inhibit surface oxidation is provided, as is a CIGS solar cell
that uses said CIGS film to minimize decreases and variability in conversion efficiency. Said CIGS film, which is used as a light-absorbing layer in said CIGS solar cell
, has the following regions: a first region in which a Ga/(In+Ga) ratio gradually decreases with increasing distance from the bottom surface of the CIGS film, up to a prescribed first thicknesswise position; a second region in which the Ga/(In+Ga) ratio gradually increases with increasing distance from the first region, up to a prescribed second thicknesswise position; and a third region in which the Ga/(In+Ga) ratio gradually decreases from the top of the second region to the top surface of the CIGS film.
||WO||WO/2014/125899 - METHOD FOR MANUFACTURING CIGS FILM AND METHOD FOR MANUFACTURING CIGS SOLAR CELL USING SAID METHOD||21.08.2014||
||PCT/JP2014/051506||NITTO DENKO CORPORATION||TERAJI Seiki|
A method for manufacturing a CIGS film that can inhibit surface oxidation is provided, as is a method that uses said method for manufacturing a CIGS film to manufacture a CIGS solar cell
wherein decreases and variability in conversion efficiency are minimized. The formation of the aforementioned CIGS film, which is used as a light-absorbing layer in the aforementioned CIGS solar cell
, has the following steps: a step in which a first region is formed in which a Ga/(In+Ga) ratio gradually decreases with increasing distance from the bottom surface of the CIGS film, up to a prescribed first thicknesswise position; a step in which a second region is formed in which the Ga/(In+Ga) ratio gradually increases with increasing distance from the top of the first region, up to a prescribed second thicknesswise position; and a step in which selenium and indium are vapor-deposited on top of the second region so as to form a third region in which the Ga/(In+Ga) ratio gradually decreases up to the top surface of the CIGS film.