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Analysis

1 / 121
1.20240113302SILICON COMPOSITE CLUSTER AND CARBON COMPOSITE THEREOF, AND ELECTRODE, LITHIUM BATTERY, AND ELECTRONIC DEVICE EACH INCLUDING THE SAME
US - 04.04.2024
Int.Class H01M 4/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4Electrodes
02Electrodes composed of, or comprising, active material
62Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
 Appl.No 18480090 Applicant Samsung Electronics Co., Ltd. Inventor Inhyuk SON

A porous silicon composite includes: a porous core including a porous silicon composite secondary particle; and a shell disposed on a surface of the porous core and surrounding the porous core, wherein the porous silicon composite secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a first graphene on a surface of the silicon suboxide, wherein the shell include a second graphene, and at least one of the first graphene and the second graphene includes at least one element selected from nitrogen, phosphorus, and sulfur.

2.20240074286DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
US - 29.02.2024
Int.Class H10K 59/80
Appl.No 18229225 Applicant Samsung Display Co., LTD. Inventor HYUNEOK SHIN

A display device includes a circuit layer and a display element layer on the circuit layer. The display element layer includes a light-emitting element and a pixel-defining film, through which a pixel opening is defined, and the light-emitting element includes a first electrode exposed through the pixel opening, a second electrode disposed opposite to the first electrode, and a light-emitting layer disposed between the first electrode and the second electrode. The first electrode includes a metal layer and a graphene layer disposed on an upper surface of the metal layer, and the metal layer and the graphene layer each have a hexagonal closed packed structure.

3.4329460DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
EP - 28.02.2024
Int.Class H10K 59/80
Appl.No 23193590 Applicant SAMSUNG DISPLAY CO LTD Inventor SHIN HYUNEOK
A display device includes a circuit layer and a display element layer on the circuit layer. The display element layer includes a light-emitting element and a pixel-defining film, through which a pixel opening is defined, and the light-emitting element includes a first electrode exposed through the pixel opening, a second electrode disposed opposite to the first electrode, and a light-emitting layer disposed between the first electrode and the second electrode. The first electrode includes a metal layer and a graphene layer disposed on an upper surface of the metal layer, and the metal layer and the graphene layer each have a hexagonal closed packed structure.
4.20240047688SILICON COMPOSITE CLUSTER AND CARBON COMPOSITE THEREOF, AND ELECTRODE, LITHIUM BATTERY, AND ELECTRONIC DEVICE EACH INCLUDING THE SAME
US - 08.02.2024
Int.Class H01M 4/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4Electrodes
02Electrodes composed of, or comprising, active material
62Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
 Appl.No 18480106 Applicant Samsung Electronics Co., Ltd. Inventor Inhyuk SON

A porous silicon composite includes: a porous core including a porous silicon composite secondary particle; and a shell disposed on a surface of the porous core and surrounding the porous core, wherein the porous silicon composite secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a first graphene on a surface of the silicon suboxide, wherein the shell include a second graphene, and at least one of the first graphene and the second graphene includes at least one element selected from nitrogen, phosphorus, and sulfur.

5.20240047528SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME
US - 08.02.2024
Int.Class H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
 Appl.No 18156049 Applicant Samsung Electronics Co., Ltd. Inventor Minsu SEOL

A semiconductor device may include a two-dimensional (2D) material layer, a source electrode and a drain electrode spaced apart from each other on the 2D material layer, a gate insulating layer and a gate electrode on the 2D material layer between the source electrode and the drain electrode, and graphene layers on both sides of the gate insulating layer. The 2D material layer may include a 2D semiconductor material having a polycrystalline structure. The 2D material layer may include a sheet member and a protrusion. The sheet member may extend along one plane. The protrusion may extend in one direction perpendicular to the one plane. The graphene layer may cover a part of the sheet member and the protrusion.

6.20240030452SILICON COMPOSITE CLUSTER AND CARBON COMPOSITE THEREOF, AND ELECTRODE, LITHIUM BATTERY, AND ELECTRONIC DEVICE EACH INCLUDING THE SAME
US - 25.01.2024
Int.Class H01M 4/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4Electrodes
02Electrodes composed of, or comprising, active material
62Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
 Appl.No 18480078 Applicant Samsung Electronics Co., Ltd. Inventor Inhyuk SON

A porous silicon composite includes: a porous core including a porous silicon composite secondary particle; and a shell disposed on a surface of the porous core and surrounding the porous core, wherein the porous silicon composite secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a first graphene on a surface of the silicon suboxide, wherein the shell include a second graphene, and at least one of the first graphene and the second graphene includes at least one element selected from nitrogen, phosphorus, and sulfur.

7.4307407COMPOSITE CATHODE ACTIVE MATERIAL, CATHODE AND LITHIUM BATTERY EMPLOYING SAME, AND METHOD FOR MANUFACTURING SAME
EP - 17.01.2024
Int.Class H01M 4/36
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4Electrodes
02Electrodes composed of, or comprising, active material
36Selection of substances as active materials, active masses, active liquids
 Appl.No 22767535 Applicant SAMSUNG SDI CO LTD Inventor JO SUNG NIM
Provided are a composite cathode active material, a cathode and a lithium battery that include the same, and a method of preparing the composite cathode active material, the composite cathode active material comprising: a core; and a first shell and a second shell that are disposed on an outer side of a surface of the core, wherein the first shell includes at least one first metal compound represented by Formula XaOb (where 0<a≤3, 0<b≤4, and when a is 1, 2, or 3, b is an integer) or Formula Xa(OH)b (where 0<a≤;3, 0<b≤4, and when a is 1, 2, or 3, b is an integer), the second shell includes at least one second metal compound represented by Formula YcOd (where 0<c≤3, 0<d<4, and when c is 1, 2, or 3, d is not an integer); and graphene, the at least one second metal compound is disposed in a graphene matrix, X and Y are each independently a metal selected from Groups 2 to 13, 15, and 16 of the Periodic Table of Elements.
8.20240014315SEMICONDUCTOR DEVICE INCLUDING GRAPHENE
US - 11.01.2024
Int.Class H01L 29/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
 Appl.No 18157416 Applicant Samsung Electronics Co., Ltd. Inventor Keunwook Shin

A semiconductor device may include a substrate including a source region and a drain region in a trench, a gate insulating layer in the trench, and a gate electrode in the trench. The gate electrode may include a lower filling portion and an upper filling portion surrounded by the gate insulating layer. The lower filling portion may include a first conductive layer surrounded by the gate insulating layer and may fill a lower region of the trench. The upper filling portion may include a second conductive layer surrounded by the gate insulating layer and may fill an upper region of the trench. The first conductive layer may include graphene doped with metal.

9.20230411238SEMICONDUCTOR DEVICE
US - 21.12.2023
Int.Class H01L 23/373
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
373Cooling facilitated by selection of materials for the device
 Appl.No 18089615 Applicant SAMSUNG ELECTRONICS CO., LTD. Inventor ILHAN YUN

A solid state drive (SSD) includes a case including a planar portion, a protrusion portion protruding from the planar portion, and a plurality of fins protruding from the planar portion and defining an internal space, a printed circuit board located within the internal space of the case and including a semiconductor device and a controller, and a heat dissipation sheet covering the planar portion and the protrusion portion of the case. The plurality of fins are spaced apart from the protrusion portion and the printed circuit board in a first direction, an upper surface of the semiconductor device and an upper surface of the controller are in direct contact with the heat dissipation sheet, and the heat dissipation sheet includes at least one of graphite, graphene, carbon nanotubes, and fullerene.

10.WO/2023/243970LIGHT-EMITTING ELEMENT AND ELECTRONIC DEVICE COMPRISING SAME
WO - 21.12.2023
Int.Class H10K 50/17
Appl.No PCT/KR2023/008063 Applicant SAMSUNG DISPLAY CO., LTD. Inventor KIM, Se Hun
Disclosed is a light-emitting element in which a hole injection layer is disposed between a light emission layer and a second electrode, the hole injection layer comprises graphene, the hole injection layer and the second electrode come into contact with each other, and a first electrode is a cathode.
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