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1. (WO2010011858) MICRO- AND NANO-STRUCTURED LED AND OLED DEVICES
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Latest bibliographic data on file with the International Bureau   
Pub. No.:    WO/2010/011858    International Application No.:    PCT/US2009/051574
Publication Date: 28.01.2010 International Filing Date: 23.07.2009
IPC:
H01L 33/24 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
24
of the light emitting region, e.g. non-planar junction
Applicants: MAO, Samuel, S. [CN/US]; (US) (For US Only).
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street, 12th Floor Oakland, CA 94607-5200 (US) (For All Designated States Except US)
Inventors: MAO, Samuel, S.; (US)
Agent: AUSTIN, James, E.; (US)
Priority Data:
61/083,350 24.07.2008 US
Title (EN) MICRO- AND NANO-STRUCTURED LED AND OLED DEVICES
(FR) DISPOSITIFS DE LED ET OLED À STRUCTURE MICROMÉTRIQUE ET NANOMÉTRIQUE
Abstract: front page image
(EN)Structured LED devices and component structures with improved efficiency and reduced defects are enabled by the use of micro- or nano-structured features that reduce lattice strain and improve p-doping in inorganic LEDs, and facilitate carrier injection and recombination of OLEDs. The nanostructures can also confine current flow and provide internal light guiding to enhance efficiency and thereby improve device performance.
(FR)La présente invention concerne des dispositifs LED structurés et des structures de composants présentant une efficacité améliorée et des défauts moins nombreux, qui sont activés par l’utilisation de caractéristiques à structure micrométrique ou nanométrique qui réduisent la contrainte de réseau et améliorent le dopage p dans des LED inorganiques, et qui facilitent l’injection de charge et la recombinaison de plusieurs OLED. Les nanostructures peuvent également confiner le flux de courant et permettre un guidage de lumière interne pour améliorer l’efficacité et de ce fait améliorer la performance des dispositifs.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Org. (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (EAPO) (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)